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HM2301BSR

Part Number	HM2301BSR
Manufacturer	H&M Semiconductor
Description	P-Channel 20V (D-S) MOSFET
Published	Nov 27, 2018
Detailed Description	HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BSR is the P-Channel logic enhancement mode power fi...
Datasheet	HM2301BSR PDF File

Overview

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System FEATURES ● RDS(ON)= 0.
48Ω @VGS=-4.
5V ● RDS(ON)= 0.
67Ω @VGS=-2.
5V ● RDS(ON)= 0.
95Ω @VGS=-1.
8V ● RDS(ON)= 2.
20Ω @VGS=-1.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● Load Switch ● DSC 2301 Marking and pin Ass...

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