DatasheetsPDF.com

HM2309

Part Number	HM2309
Manufacturer	H&M Semiconductor
Description	P-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309 is the P-Channel logic enhancement mode power field effect tra...
Datasheet	HM2309 PDF File

Overview

HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES ● RDS(ON)≦215mΩ@VGS=-10V ● RDS(ON)≦260mΩ@VGS=-4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management ● Portable Equipment ● Battery Powered System ● Load Switch Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS...

Similar Datasheet

HM2300 N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300B N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300C N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300D N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300DR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300PR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2301 Digital-output humidity and temperature sensor - Hanwei
HM2301A P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2301B P-Channel Trench Power MOSFET - H&M Semiconductor
HM2301BJR P-Channel MOSFET - H&M Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)