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HM2309B

Part Number	HM2309B
Manufacturer	H&M Semiconductor
Description	P-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309B is the P-Channel logic enhancement mode power field effect t...
Datasheet	HM2309B PDF File

Overview

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES ● RDS(ON)≦188mΩ@VGS=-10V ● RDS(ON)≦266mΩ@VGS=-4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management ● Portable Equipment ● Battery Powered System ● Load Switch Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol V...

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