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HM2309C

Part Number	HM2309C
Manufacturer	H&M Semiconductor
Description	P-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	+0& P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effe...
Datasheet	HM2309C PDF File

Overview

+0& P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE -60V/-3.
0A, RDS(ON) = 150m-ohm (Typ.
) @VGS = -10V -60V/-2.
5A, RDS(ON) = 185m-ohm @VGS = -4.
5V Super high...

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