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HM4606C

H&M Semiconductor
Part Number HM4606C
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4606C N and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provid...
Datasheet PDF File HM4606C PDF File

HM4606C
HM4606C

Overview
HM4606C N and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
General Features ● N-Channel VDS = 20V,ID =5.
0A RDS(ON) < 59mΩ @ VGS=10V RDS(ON) < 45mΩ @ VGS=4.
5V ● P-Channel VDS = -20V,ID = -4.
0A RDS(ON) < 140mΩ @ VGS=-4.
5V RDS(ON) < 110mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount pack age N-channel P-channel Schematic diagram HM4606C Marking and pin assignment Application ● PWM applications ● Load switch ● Power management SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4606C HM4606C SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel Drain-Source Voltage VDS 20 Gate-Sourc...


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