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HM4606A

H&M Semiconductor
Part Number HM4606A
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4606A N and P-Channel Enhancement Mode Power MOSFET Description The HM4606A uses advanced trench technology to provid...
Datasheet PDF File HM4606A PDF File

HM4606A
HM4606A

Overview
HM4606A N and P-Channel Enhancement Mode Power MOSFET Description The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS = 30V,ID =6.
5A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width ...


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