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HM4618B

H&M Semiconductor
Part Number HM4618B
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provid...
Datasheet PDF File HM4618B PDF File

HM4618B
HM4618B

Overview
HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.
5V N-channel P-channel Schematic diagram ● P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package HM4618B Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Dev...


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