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HM4618A

H&M Semiconductor
Part Number HM4618A
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4618A N and P-Channel Enhancement Mode Power MOSFET Description The HM4618A uses advanced trench technology to provid...
Datasheet PDF File HM4618A PDF File

HM4618A
HM4618A

Overview
HM4618A N and P-Channel Enhancement Mode Power MOSFET Description The HM4618A uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.
5V ● P-Channel VDS =40V,ID =15A RDS(ON) <13mΩ @ VGS=10V N-channel P-channel Schematic diagram HM4618A ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device...


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