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HM2302F

H&M Semiconductor
Part Number HM2302F
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide exce...
Datasheet PDF File HM2302F PDF File

HM2302F
HM2302F

Overview
HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 20V,ID = 2.
8A RDS(ON) < 50mΩ @ VGS=2.
5V RDS(ON) < 40mΩ @ VGS=4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram A2SHB Marking and pin assignment Application ● Battery protection ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A2SHB HM2302F SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maxi...


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