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HM2302BSR

H&M Semiconductor
Part Number HM2302BSR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description .3(98 1&KDQQHO9 '6 026)(7 GENERAL DESCRIPTION The HM2302BSR is the N-Channel logic enhancement mode power fi...
Datasheet PDF File HM2302BSR PDF File

HM2302BSR
HM2302BSR

Overview
.
3(98 1&KDQQHO9 '6 026)(7 GENERAL DESCRIPTION The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● FEATURES ● RDS(ON)= 270 mΩ @VGS=4.
5V ● RDS(ON)= 330 mΩ @VGS=2.
5V ● RDS(ON)= 450 mΩ @VGS=1.
8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302 G1 2S Marking and pin Assignment SOT-523 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V V * Th Nov, 2013-Ver1.
0 Shenzhen H&M Semiconductor Co.
Ltd http：//www.
hmsemi.
com 01 .
3...


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