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HM2302B

H&M Semiconductor
Part Number HM2302B
Manufacturer H&M Semiconductor
Description N-Channel Trench Power MOSFET
Published Dec 2, 2015
Detailed Description N-Channel Trench Power MOSFET General Description The HM2302B uses advanced trench technology to provide excellent RDS(O...
Datasheet PDF File HM2302B PDF File

HM2302B
HM2302B

Overview
N-Channel Trench Power MOSFET General Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a battery protection or in other switching application.
Features ● VDS = 20V,ID =2.
5A RDS(ON) < 60mΩ @ VGS =4.
5V RDS(ON) < 90mΩ @ VGS =2.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management HM2302B Schematic Diagram SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A2sHB HM2302B SOT-23 Reel Size Ø180mm Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous Drain Current-Continuous@ Current-Pulsed (Note 1) PD Maximum Power Dissipation TJ,TSTG Operating Junction and Storage Temperat...


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