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SI2309

CCSemi
Part Number SI2309
Manufacturer CCSemi
Description P-Channel 60-V(D-S) MOSFET
Published Nov 28, 2018
Detailed Description MOSFET P-Channel 60-V(D-S) MOSFET SI2309 Features ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta...
Datasheet PDF File SI2309 PDF File

SI2309
SI2309

Overview
MOSFET P-Channel 60-V(D-S) MOSFET SI2309 Features ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation*1,2 L = 0.
1 mH TA=25℃ TA=70℃ IAS PD Operating Junction and Storage Temperature Range Tj.
Tstg Maximum Junction-to-Ambient*2 RthJA Maximum Junction-to-Ambient*3 *1.
Pulse Width limited by maximum junction temperature.
*2.
Surface Mounted on FR4 Board, t≤5sec.
*3.
Surface Mounted on FR4 Board.
Rating -60 ±20 -1.
25 -0.
85 -8 -5 1.
25 0.
8 -55 to 150 145 175 Unit V V A A A W ℃ ℃/W www.
canctech.
com Revision 2016/8/15 @2016-2017 CCSemi .
MOSFET Electrical Characteristics Ta=25℃ Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Cu...


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