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VN40AFD

Siliconix
Part Number VN40AFD
Manufacturer Siliconix
Description N-Channel Enhancement-Mode MOS Transistor
Published Dec 3, 2018
Detailed Description ~Siliconix .L;II incorporated VN40AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V(BR)OSS rOS(ON) (V) ...
Datasheet PDF File VN40AFD PDF File

VN40AFD
VN40AFD

Overview
~Siliconix .
L;II incorporated VN40AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V(BR)OSS rOS(ON) (V) (!l) 10 (A) 40 5 1.
14 PACKAGE TO-22080 80 = Side Drain Performance Curves: VNDQ06 (See Section 7) TO-220SD TOP VIEW o 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Vos VGS ID 10M Po Tj.
Tstg h VN40AFD 40 ±30 1.
14 0.
72 3 15 6 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Case SYMBOL RthJC 1Pulse width limited by maximum junction temperature.
VN40AFD 8.
3 UNITS °C/W 6-51 VN40AFD ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate T...


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