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VN40AF Datasheet PDF

Siliconix
Part Number VN40AF
Manufacturer Siliconix
Title (VN40AF / VN46AF) MOSPOWER
Description www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ...
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VN4012 : fCTSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN4012L 400 12 0.16 TO-92 VN4012B 400 12 0.42 TO-205AF VN3515L 350 15 0.15 TO-92 VN4012 SERIES N-Channel Enhancement-Mode MOS Transistors - ' §TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-205AF BOTTOM VIEW Performance Curves: VNDV40 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN4012L VN4012B 2 VN3515L UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA=100°C Operating Junctio.

VN4012 : This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

VN4012 : The VN4012 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Pa.

VN4012L : VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V RDS(ON) (max) 15Ω 12Ω VGS(th) (max) 1.8V 1.8V ID(ON) (min) 0.15A 0.15A Order Number / Package TO-92 VN3515L VN4012L Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices w.

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VN40AFD : ~Siliconix .L;II incorporated VN40AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V(BR)OSS rOS(ON) (V) (!l) 10 (A) 40 5 1.14 PACKAGE TO-22080 80 = Side Drain Performance Curves: VNDQ06 (See Section 7) TO-220SD TOP VIEW o 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Vos VGS ID 10M Po Tj. Tstg h VN40AFD 40 ±30 1.14 0.72 3 15 6 -55 to 150 3.




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