DatasheetsPDF.com

PE8806

Part Number	PE8806
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	N-Channel Enhancement Mode Power MOSFET Description The PE8806 uses advanced trench technology to provide excellent RDS(...
Datasheet	PE8806 PDF File

Overview

N-Channel Enhancement Mode Power MOSFET Description The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.
5V RDS(ON) < 17 mΩ @ VGS=3.
8V RDS(ON) < 21mΩ @ VGS=2.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch PE8806 Schematic diagram Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous...

Similar Datasheet

PE8804 N-Channel Enhancement Mode Power MOSFET - semi one
PE8806 N-Channel Enhancement Mode Power MOSFET - semi one
PE8810 N-Channel Enhancement Mode Power MOSFET - semi one
PE8813 N-Channel Enhancement Mode Power MOSFET - semi one

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)