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PE8813

Part Number	PE8813
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PE8813 N-Channel Enhancement Mode Power MOSFET Description The PE8813 uses advanced trench technology to provide excell...
Datasheet	PE8813 PDF File

Overview

PE8813 N-Channel Enhancement Mode Power MOSFET Description The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.
5V RDS(ON) =11mΩ@ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ●PWM application ●Load switch TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Volt...

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