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LN2312

Part Number	LN2312
Manufacturer	natlinear
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Dec 4, 2018
Detailed Description	N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 4.5A ■ Features ...
Datasheet	LN2312 PDF File

Overview

N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 4.
5A ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L package ■ Package  Schematic diagram D G S RDS(ON)(mΩ)TYP 22 @ VGS= 4.
5V 40 @ VGS= 2.
5V LN2312  Pin configuration Pin Name G D S ■ Ordering Information SOT23-3L 1 3 2 Description Gate Drain Source Part Number LN2312MR Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junctio...

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