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VQ1006

Siliconix
Part Number VQ1006
Manufacturer Siliconix
Description N-Channel Enhancement-Mode MOS Transistor
Published Dec 6, 2018
Detailed Description VQ1006 SERIES N-Channel Enhancement-Mode MOS Transistor Arrays PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) ...
Datasheet PDF File VQ1006 PDF File

VQ1006
VQ1006

Overview
VQ1006 SERIES N-Channel Enhancement-Mode MOS Transistor Arrays PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (11) (A) PACKAGE VQ1006J 90 4.
5 0.
40 Plastic VQ1006P 90 4.
5 0.
40 Side Braze Performance Curves: VNDQ09 (See Section 7) 14-PIN DIP SIDE BRAZE ~".
" .
.
) :.
"" " 14-PIN PLASTIC ~Siliconix ~ incorporated TOP VIEW Oual-In-Line Package =ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current.
Pulsed Drain Current 1 TA= 25DC TA= 100DC Power Dissipation - Single TA= 25DC TA= 100DC Power Dissipation - Quad TA= 25DC TA=100DC Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS ID IDM PD TJ.
Tstg h VQ1006J VQ1006P 90 ±30 0.
40 0.
23 90 ±20 0.
40 0.
23 ±2 ±2 1.
3 1.
3 0.
52 0.
52 22 O.
B O.
B -55 to 150 300 UNITS V A W DC THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient - Sing...


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