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VQ1001J

Vishay Siliconix
Part Number VQ1001J
Manufacturer Vishay Siliconix
Description Quad N-Channel 30-V (D-S) MOSFETs
Published Apr 16, 2005
Detailed Description VQ1001J/P Vishay Siliconix Quad N-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VQ1001J VQ1001P V(BR)DSS Min ...
Datasheet PDF File VQ1001J PDF File

VQ1001J
VQ1001J

Overview
VQ1001J/P Vishay Siliconix Quad N-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VQ1001J VQ1001P V(BR)DSS Min (V) 30 rDS(on) Max (W) 1 @ VGS = 12 V 1 @ VGS = 12 V VGS(th) (V) 0.
8 to 2.
5 0.
8 to 2.
5 ID (A) 0.
83 0.
53 FEATURES D D D D D Low On-Resistance: 0.
85 W Low Threshold: 1.
4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 N S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ1001P “S” fllxxyy N Device Marking Top View VQ1001J “S” fllxxyy Top View Plastic: VQ1001J Sidebraze: VQ1001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage VQ1001J VQ1001P Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation (Single) Thermal Resistance, Junction-to-Ambient (Single) Operating Junction and Storage Temperature Range Notes a.
Pulse width limited by maximum junction temperature.
Document Number: 70219 S-04279—Rev.
D, 16-Jul-01 www.
vishay.
com TA= 25_C TA= 100_C TA= 25_C TA= 100_C ID IDM PD RthJA TJ, Tstg Symbol VDS VGS Single 30 "30 "20 0.
83 0.
53 3 1.
3 0.
52 96 Total Quad Unit V A 2 0.
8 62.
5 –55 to 150 W _C/W _C 11-1 VQ1001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "16 V TJ = 125_C VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 24 V, VGS = 0 V, TJ = 125_C V...


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