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2N6676


Part Number 2N6676
Manufacturer GE
Title NPN POWER TRANSISTORS
Description HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS GE EQUIVALENT D64VS3, 4, 5 2N6676,77,78 300-400 VOLTS 15 AMP, 175 WATTS The 2N6676, 2N6677 and 2N6...
Features
• 100°C maximum limits specified for:
• Switching times
• Saturation voltages
• Leakage currents
• RBSOA (VCEX = 350 to 450V) at rated IC continuous.
• Very fast turn-off: tf 100 nsec (typ.) @ 15A -Inductive Load maximum ratings RATING Collector-Emitter Voltage Collector-Emitter Voltage Collector...

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2N6671 : .

2N6671 : ·With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6671 2N6672 2N6673 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6671 VCBO Collector-base voltage 2N6672 2N6673 2N6671 VCEO Collector-emitter voltage 2N6672 2N6673 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 .

2N6671 : 2N6671 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 300V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditio.

2N6672 : .

2N6672 : ·With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6671 2N6672 2N6673 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6671 VCBO Collector-base voltage 2N6672 2N6673 2N6671 VCEO Collector-emitter voltage 2N6672 2N6673 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 .

2N6672 : 2N6672 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 350V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditio.

2N6673 : 2N6673 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test C.

2N6673 : .

2N6673 : ·With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6671 2N6672 2N6673 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6671 VCBO Collector-base voltage 2N6672 2N6673 2N6671 VCEO Collector-emitter voltage 2N6672 2N6673 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 .

2N6673 : .

2N6674 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* @ TA = +250C @ TC = +250C(1) Operating & Storage Temperature Range Total Power Dissipation PT Top; Tstg Symbol RθJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics .

2N6674 : The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6674 450 2N6675 650 300 400 7.0 15 20 5.0 175 -65 to +200 1.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE=1.5V ICEV .

2N6674 : ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6674 2N6675 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6674 VCBO Collector-base voltage 2N6675 2N6674 VCEO Collector-emitter voltage 2N6675 VEBO IC IB Emitter-base voltage Collector current Base current Ta=25 PT Total Power Dissipation TC=25 Tj Tstg Junction temperature Storage temperature 175 200 -65~200 Open collector Open base 400 7 15 5 6 W V A A Open emitter 650 300 V CONDITIONS VALUE 450 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER.

2N6674 : at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER E.

2N6674 : 2N6674 & 2N6675 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Test Conditions IC = 200 mAdc 2N6674 2N6675 Symbol Units Min. V(BR)CEO Vdc 300 400 Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Sustaining Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674 VCE = 650 Vdc, VBE = -1..

2N6675 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* @ TA = +250C @ TC = +250C(1) Operating & Storage Temperature Range Total Power Dissipation PT Top; Tstg Symbol RθJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics .

2N6675 : The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6674 450 2N6675 650 300 400 7.0 15 20 5.0 175 -65 to +200 1.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE=1.5V ICEV .




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