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2N6724 Datasheet PDF


Part Number 2N6724
Manufacturer GE
Title NPN POWER TRANSISTORS
Description 92GU45,45A NPN POWER DARLINGTON 2N6724,25 TRANSISTORS 40-50 VOLTS 2 AMPS, 1 WATTS Features: • Lamp driver • Digit driver • Directly compatible ...
Features
• Lamp driver
• Digit driver
• Directly compatible with bipolar and MOS lie drive ~BASE~EMITTER COLLECTOR NPN COLLECTOR EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ..,.----r------i~ .105(2.67) ---r.095(2.41) SEATING PLANE .050(1.27) ----L .250(6.35) 1- ~or[ .018(.46...

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2N6724 : NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt 2N6724 2N6725 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 50 40 10 2 1 1 E-Line TO92 Compatible 2N6724 2N6725 60 50 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE CCB 25K 15K 4K 2N67.

2N6724 : The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC 2N6724 50 2N6725 60 40 50 12 2.0 0.5 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=30V ICBO VCB=40V IEBO VEB=10V BVCBO IC=1.0μA BVCES IC=1.0mA B.

2N6725 : NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt 2N6724 2N6725 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 50 40 10 2 1 1 E-Line TO92 Compatible 2N6724 2N6725 60 50 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE CCB 25K 15K 4K 2N67.

2N6725 : 92GU45,45A NPN POWER DARLINGTON 2N6724,25 TRANSISTORS 40-50 VOLTS 2 AMPS, 1 WATTS Features: • Lamp driver • Digit driver • Directly compatible with bipolar and MOS lie drive ~BASE~EMITTER COLLECTOR NPN COLLECTOR EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ..,.----r------i~ .105(2.67) ---r.095(2.41) SEATING PLANE .050(1.27) ----L .250(6.35) 1- ~or[ .018(.46).& .016(.41)] 00D~or [....1..-_ _ .016(.41) .016(.41) .014(.36) .022(.56) & .020(.51) ] .016(.41) .016(.41) .014(.36) =maximum ratings (TA 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current - Continuous Total Power .

2N6725 : The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC 2N6724 50 2N6725 60 40 50 12 2.0 0.5 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=30V ICBO VCB=40V IEBO VEB=10V BVCBO IC=1.0μA BVCES IC=1.0mA B.

2N6726 : PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt 2N6726 2N6727 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 2N6726 -40 -30 -5 -2 -1 1 E-Line TO92 Compatible 2N6727 -50 -40 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Co.

2N6726 : PNP POWER TRANSISTORS COMPLEMENTARY TO THE 2N6714, 15/92GU01, 01A SERIES 92GU51,51A 2N6726~27 -30-(-40) VOLTS 2 AMPS, 1.2 WATTS Applications: • Class "B" audio outputs/drivers. • General purpose switching and lamp drive in industrial and automotive circuits. PNP ~BASE~EMITTER COLLECTOR COLLECTOR --EO EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -...---i-----i~ .105(2.67) - r.095(2.41) .050(1.27) J-~J-.-~~~~ SEATING PLANE .250(6.35) 1-- ~or [ .018(.461.&~] "",--__00O~o, [.016(.41) .016(.41) .014(.36) .022(.56) & .020(.51) ] .016(.41) .016(.41) .014(.36) maximum ratings (TA = 250 C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector.

2N6726 : The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg JA JC 2N6714 2N6726 40 2N6715 2N6727 50 30 40 5.0 2.0 0.5 1.0 2.0 -65 to +150 125 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise note.

2N6727 : PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt 2N6726 2N6727 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 2N6726 -40 -30 -5 -2 -1 1 E-Line TO92 Compatible 2N6727 -50 -40 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Co.

2N6727 : PNP POWER TRANSISTORS COMPLEMENTARY TO THE 2N6714, 15/92GU01, 01A SERIES 92GU51,51A 2N6726~27 -30-(-40) VOLTS 2 AMPS, 1.2 WATTS Applications: • Class "B" audio outputs/drivers. • General purpose switching and lamp drive in industrial and automotive circuits. PNP ~BASE~EMITTER COLLECTOR COLLECTOR --EO EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -...---i-----i~ .105(2.67) - r.095(2.41) .050(1.27) J-~J-.-~~~~ SEATING PLANE .250(6.35) 1-- ~or [ .018(.461.&~] "",--__00O~o, [.016(.41) .016(.41) .014(.36) .022(.56) & .020(.51) ] .016(.41) .016(.41) .014(.36) maximum ratings (TA = 250 C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector.

2N6727 : The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg JA JC 2N6714 2N6726 40 2N6715 2N6727 50 30 40 5.0 2.0 0.5 1.0 2.0 -65 to +150 125 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise note.

2N6727 : Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6727 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition.

2N6728 : PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6728 2N6729 2N6730 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6728 VCBO VCEO VEBO ICM IC Ptot -60 -60 2N6729 -80 -80 -5 -2 -1 1 E-Line TO92 Compatible 2N6730 -100 -100 UNIT V V V A A W °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS. MIN. MAX MIN. MAX MIN. MAX Co.

2N6728 : The 2N6728 and 2N6730 are silicon NPN power transistors in a TO−237 type package designed for general purpose power amplifier and switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base 2N6728 Voltage, .. V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6730 . . 100V Collector−Emitter 2N6728 . . Voltage, .. V. .C.E.O. . . . . . . . . . . . . . ..

2N6728 : PNP POWER TRANSISTORS COMPLEMENTARY TO THE 2N6716, 17/92GU05, 06 SERIES 92GU55,56 2N6728,29 -60-(-80) VOLTS 2 AMPS, 1.2 WATTS Applications: • High VCE ratings: 92GU55 =60V min. VCEO 92GU56 =80V min. VCEO • Exceptional power-to-price ratio ~BASE~EMITTER COLLECTOR PNP COLLECTOR EMITTER CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .105(2.67) .095(2.41) .050(1.27) -'---:rr-'-..---'-rr-lT"Tr' - - L SEATING PLANE .250(6.35) ~ ~or[ .018(.461.& ..016(.41)] .Q16(.41) .016(.41) .014(.36) -,-_ _ 00O~or [022(.56) & .020(.51) ] .016(.41) .016(.41) .014(.36) .105(2.67) .080(2.03) t maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage .

2N6728 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com .




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