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MRF282ZR1

NXP
Part Number MRF282ZR1
Manufacturer NXP
Description RF Power Field Effect Transistors
Published Jan 3, 2019
Detailed Description ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006...
Datasheet PDF File MRF282ZR1 PDF File

MRF282ZR1
MRF282ZR1

Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev.
15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
• Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.
5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc • Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.
5 dB Efficiency — 35% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • Available in Tape and Reel.
R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1.
Maximum Ratings Rati...


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