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MRF282Z

Part Number	MRF282Z
Manufacturer	Motorola
Description	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Published	Dec 10, 2007
Detailed Description	www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET L...
Datasheet	MRF282Z PDF File

Overview

www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = –30 dBc • Specified Single–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (CW) Power Gain = 11 dB Efficiency = 40% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power • Gold Metallization for Improved Reliability MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ MRF282S MRF282Z 10 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 458–03, STYLE 1 (MRF282S) CASE 458A–01, STYLE 1 (MRF282Z) Value 65 ± 20 60 0.
34 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.
9 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 — — — — — — 1.
0 1.
0 Vdc µAdc µAdc Symbol Min Typ Max Unit NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1 MOTOROLA RF DEVICE DATA ...

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