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SI2310

CCSemi
Part Number SI2310
Manufacturer CCSemi
Description N-Channel Power MOSFET
Published Jan 3, 2019
Detailed Description MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device ...
Datasheet PDF File SI2310 PDF File

SI2310
SI2310

Overview
MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current * Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range * 2.
Pulse width ≤300us , duty cycle≤ 2% Symbol VDS VGS ID IDM PD RthJA Tj.
Tstg Rating 60 ±20 3 2.
3 10 1.
25 100 -55 to 150 Unit V V A W ℃/W ℃ www.
canctech.
com Revision 2016/8/15 @2016-2017 CCSemi .
MOSFET Electrical Characteristics Ta=25℃ Parameter Symbol Test conditions Min Typ Max Unit Drain-Source Breakdown...


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