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CGH40006S

Cree
Part Number CGH40006S
Manufacturer Cree
Description RF Power GaN HEMT
Published Feb 3, 2019
Detailed Description CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility...
Datasheet PDF File CGH40006S PDF File

CGH40006S
CGH40006S

Overview
CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits.
The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package.
PackaPgNe’sT:yCpeGsH: 4404000260S3 FEATURES • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.
0 GHz • 11 dB Small Signal Gain at 6.
0 GHz • 8 W typical at PIN = 32 dBm • 65 % Efficiency at PIN = 32 dBm • 28 V Operation • 3mm x 3mm Package APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 3.
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