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CGH40006P

Cree
Part Number CGH40006P
Manufacturer Cree
Description RF Power GaN HEMT
Published Apr 19, 2016
Detailed Description CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transist...
Datasheet PDF File CGH40006P PDF File

CGH40006P
CGH40006P

Overview
CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits.
The transistor is available in a solder-down, pill package.
PackaPgNe’sT:yCpGesH: 4404000160P9 FEATURES • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.
0 GHz • 11 dB Small Signal Gain at 6.
0 GHz • 8 W typical at PIN = 32 dBm • 65 % Efficiency at PIN = 32 dBm • 28 V Op...


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