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CG2H40045

CREE
Part Number CG2H40045
Manufacturer CREE
Description RF Power GaN HEMT
Published Feb 3, 2019
Detailed Description CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobil...
Datasheet PDF File CG2H40045 PDF File

CG2H40045
CG2H40045

Overview
CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits.
The transistor is available in a flange and pill package.
PPNa’sc:kCaGge2HTy4p0e0s4:54P4&02C0G62&H4404004252F3 FEATURES • Up to 4 GHz Operation • 18 dB Small Signal Gain at 2.
0 GHz • 14 dB Small Signal Gain at 4.
0 GHz • 55 W Typical PSAT • 60 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 2.
0 - September 2018 Subject to change without notice.
w...


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