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D84BN2

Part Number	D84BN2
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 9, 2019
Detailed Description	~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.5 AMPERES 200,150 VOLTS ROS(ON) = 1.5 il This series of N-C...
Datasheet	D84BN2 PDF File

Overview

~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.
5 AMPERES 200,150 VOLTS ROS(ON) = 1.
5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE TO-220AB DIMENSIO...

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