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D84BQ1

Part Number	D84BQ1
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 9, 2019
Detailed Description	~o~~~LF FIELD EFFECT POVVER TRANSISTOR IRF710,711 D84BQ2~BQ1 1.5 AMPERES 400, 350 VOLTS RDS(ON) =3.6 .0. This series o...
Datasheet	D84BQ1 PDF File

Overview

~o~~~LF FIELD EFFECT POVVER TRANSISTOR IRF710,711 D84BQ2~BQ1 1.
5 AMPERES 400, 350 VOLTS RDS(ON) =3.
6 .
0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL DIMENSIONS ARE IN INCHE...

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