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IRFD222

Part Number	IRFD222
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 10, 2019
Detailed Description	~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enh...
Datasheet	IRFD222 PDF File

Overview

~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.
7 AMPERES 200, 150 VOLTS RDS(ON) =.
1.
20 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No second...

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