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SI3401

ZHONGGUI
Part Number SI3401
Manufacturer ZHONGGUI
Description P-Channel MOSFET
Published Feb 19, 2019
Detailed Description DONGGUAN ZHONGGUI ELECTRONICS CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SI3401 P-Channel Enhancement Mode Field Effec...
Datasheet PDF File SI3401 PDF File

SI3401
SI3401

Overview
DONGGUAN ZHONGGUI ELECTRONICS CO.
, LTD SOT-23 Plastic-Encapsulate MOSFETS SI3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability MARKING: R1 D 1.
GATE 2.
SOURCE 3.
DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG G S Value -30 ±12 -4.
2 350 357 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V On characteristics Drain-source on-...


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