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SI3400A

MCC
Part Number SI3400A
Manufacturer MCC
Description N-Channel MOSFET
Published Jul 23, 2020
Detailed Description Features • High Dense Cell Design for Extremely Low RDS(ON) • Exceptional On-Resistance and Maximum DC Current Capabilit...
Datasheet PDF File SI3400A PDF File

SI3400A
SI3400A

Overview
Features • High Dense Cell Design for Extremely Low RDS(ON) • Exceptional On-Resistance and Maximum DC Current Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant.
See Ordering Information) SI3400A N-Channel MOSFET Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 96°C/W Junction to Ambient(Note2) Parameter Symbol Rating Unit Drain -Source Voltage VDS 30 V Gate -Source Voltage VGS ±12 V Drain Current-Continuous ID 5.
8 A Drain Current-Pulsed (Note1) Power Dissipation IDM 30 A PD 1.
3 W Internal Structure D G S 1.
*$7E 2.
6285&( 3.
'5$,1 Marking:R0A SOT-23 A D 3 12 F E CB G H J L K DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.
110 0.
120 2.
80 3.
04 B 0.
083 0.
104 2.
10 2.
64 C 0.
047 0.
055 1.
20 1.
40 D 0.
034 0.
041 0.
85 1.
05 E 0.
067 0.
083 1.
70 2.
10 F 0.
018 0.
024 0.
45 0.
60 G 0.
0004 0.
006 0.
01 0.
15 H 0.
035 0.
043 0.
90 1.
10 J 0.
003 0.
007 0.
08 0.
18 K 0.
012 0.
020 0.
30 0.
51 L 0.
007 0.
020 0.
20 0.
50 NOTE Suggested Solder Pad Layout 0.
031 0.
800 0.
035 0.
900 0.
079 2.
000 inches mm 0.
037 0.
950 0.
037 0.
950 Rev.
3-1-01012019 1/4 MCCSEMI.
COM SI3400A ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Gate-Threshold Voltage(Note3) VGS(th) VDS=VGS, ID=250µA Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance(Note3) RDS(on) Forward Transconductance gFS Dynamic Characteristics(Note4) VGS=± 12V, VDS=0V VDS=24V, VGS=0V VGS=10V, ID=5.
8A VGS=4.
5V, ID=5.
0A VGS=2.
5V, ID=4.
0A VDS=5V, ID=5.
0A Input Capacitance Output Capacitance Ciss Coss VDS=15V,VGS=0V, f=1MHz Reverse Transfer Capacitance Gate Resistance C...


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