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PDTC143EMB

nexperia
Part Number PDTC143EMB
Manufacturer nexperia
Description NPN resistor-equipped transistor
Published Mar 4, 2019
Detailed Description SOT883B PDTC143EMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Rev. 1 — 7 June 2012 Product data shee...
Datasheet PDF File PDTC143EMB PDF File

PDTC143EMB
PDTC143EMB

Overview
SOT883B PDTC143EMB NPN resistor-equipped transistor; R1 = 4.
7 kΩ, R2 = 4.
7 kΩ Rev.
1 — 7 June 2012 Product data sheet 1.
Product profile 1.
1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA143EMB.
1.
2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.
37 mm 1.
3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.
4 Quick reference data Table 1.
Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Tamb = 25 °C Min Typ Max U...


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