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PDTC143ES

NXP
Part Number PDTC143ES
Manufacturer NXP
Description NPN resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC143ES NPN resistor-equipped transistor Product specificat...
Datasheet PDF File PDTC143ES PDF File

PDTC143ES
PDTC143ES


Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC143ES NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 May 20 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ.
4.
7 kΩ each) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package.
PNP complement: PDTA143ES.
1 2 3 MGL136 MAM364 PDTC143ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.
2 Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V CONDITIONS open base − − − − 30 3.
3 0.
8 MIN.
− − − − − 4.
7 1 TYP.
MAX.
50 100 100 500 − 6.
1 1.
2 kΩ UNIT V mA mA mW 1998 May 20 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current ...



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