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3205TR

GFD
Part Number 3205TR
Manufacturer GFD
Description N-Channel MOSFETS
Published Mar 12, 2019
Detailed Description N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are...
Datasheet PDF File 3205TR PDF File

3205TR
3205TR

Overview
N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves Applications • witching Application Systems • Inverter systems • DC Motor Control 3205TR VDS 55V RDS(ON) ID 6.
6mΩ 108A Ordering Information PART NUMBER PACKAGE BRAND 3205TR TO-220 OGFD www.
goford.
cn TEL：0755-86350980 FAX：0755-86350963 3205TR Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Sym...


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