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3205

ETC
Part Number 3205
Manufacturer ETC
Description Power MOSFET
Published May 19, 2015
Detailed Description 3205 product description FHP3205 is a low-voltage high-current power MOS field effect transistor, widely used in power ...
Datasheet PDF File 3205 PDF File

3205
3205

Overview
3205 product description FHP3205 is a low-voltage high-current power MOS field effect transistor, widely used in power inverters Features 110A, 55V, RDS(on) = 8.
0mΩ fast switching speed Available RoHS* ? COMPLIANT Limit value (TC=25℃) parameter name Drain-source voltage Drain current @Tc=25℃ Gate-source voltage Dissipated power @Tc=25℃ Junction temperature Storage temperature avalanche symbol V DS ID V GS PD TJ T stg E AS Parameter value 55 110 ±20 200 175 -55～175 20 unit V A V W ℃ ℃ mJ Dynamic characteristic value Parameter Description Input capacitance Output capacitance Reverse transmission capacitance symbol C iss C oss C rss Test Conditions V V DS=25v, GS=0V, f=1.
0 MH Z V V DS=25v, GS=0V, f=1.
0 MH Z V V DS=25v, GS=0V, f=1.
0 MH Z Minimum value ---- Typical value maximum unit 3247 -- pF 781 -- pF 211 -- pF B VDSS I DSS I GSS(F/R) R DS(ON) V GS(th) g FS V GS=0V, I D=250μ A V V DS=55v, GS=0V V V GS= 20V, DS=0V V I GS=10V, D=62A V DS= V GS, I D=250μA I V D=62A, DS=25V 55 -- - -V -- -- 25 μA -- -- 100 nA -- -- 8.
0 2.
0 -- 4.
0 V 44 -- - -S Qg Qgs Qgd V DS=44V I D=62A V GS=10V -- -- 146 nC -- -- 35 nC -- -- 54 nC ( ) Td(on) Tr Td(off) tf V DD=28V I D=62A R G=4.
5? V GS=10V -- 14 -- 101 -- 50 -- 65 -- ns -- ns -- ns -- ns I D Drain-source current (A) TOP 1000 BOTTOM VGS 15V 10V 8.
0V 7.
0V 6.
0V 5.
5V 5.
0V 4.
5V 100 10 1 0.
1 4.
5V 20μs PULSE WIDTH T = 25 CJ ° 1 10 100 V DS Drain-source voltage ( V) Fig 1.
Output characteristics I D Drain-source current (A) 1000 TOP BOTTOM 100 VGS 15V 10V 8.
0V 7.
0V 6.
0V 5.
5V 5.
0V 4.
5V 10 4.
5V 1 0.
1 20μs PULSE WIDTH T = 175 CJ ° 1 10 100 V DS Drain-source voltage ( V) Fig 2.
Output characteristics I D Drain-source current (A) 1000 100 T = 25 CJ° T = 175 CJ ° 10 VW=ID25TVH2D0Sμs PULSE 1 4 6 8 10 12 V GS Gate-source voltage ( V) Fig 3.
Change characteristics R DS(on) Drain-source on-state resistance 2.
5 ID= 107A 2.
0 1.
5 1.
0 0.
5 ...


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