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PDTB123ET

NXP
Part Number PDTB123ET
Manufacturer NXP
Description 50V resistor-equipped transistor
Published Mar 14, 2019
Detailed Description PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 — 22 September 2010 Product ...
Datasheet PDF File PDTB123ET PDF File

PDTB123ET
PDTB123ET

Overview
PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ Rev.
3 — 22 September 2010 Product data sheet 1.
Product profile 1.
1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123ET.
1.
2 Features and benefits „ 500 mA output current capability „ Built-in bias resistors „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance „ AEC-Q101 qualified 1.
3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.
4 Quick reference data Table 1.
Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ --1.
54 2.
2 0.
9 1.
0 Max −50 −500 2...


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