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PDTB123TT

NXP
Part Number PDTB123TT
Manufacturer NXP
Description 50V resistor-equipped transistor
Published Mar 14, 2019
Detailed Description PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 4 — 8 November 2010 Product data...
Datasheet PDF File PDTB123TT PDF File

PDTB123TT
PDTB123TT

Overview
PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.
2 kΩ, R2 = open Rev.
4 — 8 November 2010 Product data sheet 1.
Product profile 1.
1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123TT.
1.
2 Features and benefits „ 500 mA output current capability „ Built-in bias resistor „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ AEC-Q101 qualified 1.
3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.
4 Quick reference data Table 1.
Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) Conditions open base Min Typ --1.
54 2.
2 Max −50 −500 2.
86 Unit V mA kΩ NXP Semiconductors PDTB123TT PNP 500 mA resistor-equip...


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