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MTD2955E

ON Semiconductor
Part Number MTD2955E
Manufacturer ON Semiconductor
Description Power Field Effect Transistor DPAK
Published Mar 27, 2019
Detailed Description MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOS...
Datasheet PDF File MTD2955E PDF File

MTD2955E
MTD2955E

Overview
MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Surface Mount Package Available in 16 mm, 13 inch / 2500 Unit Tape & Reel, Add T4 Suffix to Part Number • Replaces the MTD2955 http://onsemi.
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