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MTD2955V

Motorola
Part Number MTD2955V
Manufacturer Motorola
Description Power Field Effect Transistor
Published Oct 5, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955V/D TMOS Power Field Effect Transistor...
Datasheet PDF File MTD2955V PDF File

MTD2955V
MTD2955V

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors ™ Data Sheet V™ MTD2955V TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.
230 OHM P–Channel Enhancement–Mode Silicon Gate TM D G S CASE 369A–13, Style 2 DPAK Surface Mount Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET • Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C(1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.
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