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F59L2G81LA-25TG

Part Number	F59L2G81LA-25TG
Manufacturer	ESMT
Description	2 Gbit (256M x 8) 3.3V NAND Flash Memory
Published	Apr 2, 2019
Detailed Description	ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Regi...
Datasheet	F59L2G81LA-25TG PDF File

Overview

ESMT Flash FEATURES Voltage Supply: 3.
3V (2.
7V ~ 3.
6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us (Typ.
) - Block Erase time: 3ms (Typ.
) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L2G81LA 2 Gbit (256M x 8) 3.
3V NAND Flash Memory Reliable CMOS Floating Gate Technology - ECC Requirement: 1bit/528Byte - Enduran...

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