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D1631

Toshiba
Part Number D1631
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Apr 2, 2019
Detailed Description 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor D...
Datasheet PDF File D1631 PDF File

D1631
D1631

Overview
2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Continuous base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.
5 50 1000 150 −55 to 150 Unit V V V A mA mW...


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