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IXTK33N50

IXYS
Part Number IXTK33N50
Manufacturer IXYS
Description N-Channel MOSFET
Published Apr 16, 2019
Detailed Description High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω Prelim...
Datasheet PDF File IXTK33N50 PDF File

IXTK33N50
IXTK33N50

Overview
High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.
17 Ω Preliminary data Symbol Test conditions VDSS VDGR VGS VGSM ID25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.
0 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM PD TC = 25°C T J TJM T stg Md Mounting torque Weight Max lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Symbol Test Conditions (TJ = 25°C unless otherwise specified) V DSS V = 0 V, I = 5 mA GS D BVDSS temperature coefficient V GS(th) V DS = VGS, I D = 250 µA V temperature coefficient GS(th) IGSS VGS = ±20 V DC, VDS = 0 I DSS V = 0.
8 V DS DSS VGS = 0 V T = 25°C J TJ = 125°C R DS(on) V = 10 V, I = 0.
5 I GS D D25 Maximum ratings 500 V 500 V ±20 V ±30 V 33 A 132 A 416 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
10 g 300 °C Characteristic Values Min.
Typ.
Max.
500 0.
087 V %/K 2.
0 4.
0 V -0.
25 %/K ±100...


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