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IXTK33N50

INCHANGE
Part Number IXTK33N50
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTK33N50 ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-r...
Datasheet PDF File IXTK33N50 PDF File

IXTK33N50
IXTK33N50

Overview
isc N-Channel MOSFET Transistor IXTK33N50 ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 132 PD Total Dissipation @TC=25℃ 416 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THER...


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