DatasheetsPDF.com

MRF18060BLR3

Part Number	MRF18060BLR3
Manufacturer	NXP
Description	RF Power Field Effect Transistor
Published	May 18, 2019
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs D...
Datasheet	MRF18060BLR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Specified for GSM 1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts CW Efficiency — 45% (Typ) @ 60 Watts CW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integ...

Similar Datasheet

MRF18060BLR3 RF Power Field Effect Transistor - NXP
MRF18060BLSR3 RF Power Field Effect Transistor - NXP
MRF18060BLSR3 RF Power Field Effect Transistors - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)