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IRFBC40A

Vishay
Part Number IRFBC40A
Manufacturer Vishay
Description Power MOSFET
Published Jun 15, 2019
Detailed Description www.vishay.com IRFBC40A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (...
Datasheet PDF File IRFBC40A PDF File

IRFBC40A
IRFBC40A

Overview
www.
vishay.
com IRFBC40A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 1.
2 42 10 20 Single FEATURES • Low gate charge Qg results in simple drive Requirement • Improved gate, avalanche and dynamic dV/dt ruggedness Available Available • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching TYPICAL SMPS TOPOLOGIES • Single transistor forward ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFBC40APbF IRFBC40APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11) b.
Starting TJ = 25 °C, L = 29.
6 mH, Rg = 25 Ω, IAS = 6.
2 A (see fig.
12) c.
ISD ≤ 6.
2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d.
1.
6 mm from case LIMIT 600 ± 30 6.
2 3.
9 25 1.
0 570 6.
2 13 125 6.
0 -55 to +150 300 10 1.
1 UN...


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