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IRFBC40A

International Rectifier
Part Number IRFBC40A
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptab...
Datasheet PDF File IRFBC40A PDF File

IRFBC40A
IRFBC40A

Overview
PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) VDSS 600V Rds(on) max 1.
2Ω ID 6.
2A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
6.
2 3.
9 25 125 1.
0 ± 30 6.
0 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l Single Transistor Forward Notes  through … are on page 8 www.
irf.
com 1 6/24/99 IRFBC40A V(BR)DSS Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.
0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
66 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 1.
2 Ω VGS = 10V, ID = 3.
7A „ 4.
0 V VDS = VGS, ID = 250µA 25 VDS = 600V, VGS = 0V µA 250 VDS = 480V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise ...


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