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NX2301P

NXP Semiconductors
Part Number NX2301P
Manufacturer NXP Semiconductors
Description 2A P-Channel Trench MOSFET
Published Aug 25, 2014
Detailed Description NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General de...
Datasheet PDF File NX2301P PDF File

NX2301P
NX2301P

Overview
NX2301P 20 V, 2 A P-channel Trench MOSFET Rev.
1 — 26 October 2010 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ „ „ „ 1.
8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.
3 Applications „ „ „ „ Relay driver High-speed line driver High-side loadswitch Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.
5 V Tj = 25 °C; VGS = −4.
5 V; ID = −1 A [1] Min - Typ 100 Max −20 ±8 −2 120 Unit V V A mΩ [2] [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
Pulse test: t...


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