DatasheetsPDF.com

PSMN2R0-30YL

nexperia
Part Number PSMN2R0-30YL
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 5, 2019
Detailed Description PSMN2R0-30YL N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Rev. 4 — 10 March 2011 Product data sheet 1. Product pr...
Datasheet PDF File PSMN2R0-30YL PDF File

PSMN2R0-30YL
PSMN2R0-30YL


Overview
PSMN2R0-30YL N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Rev.
4 — 10 March 2011 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
1.
2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.
3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.
4 Quick reference data Table 1.
Quick reference data Symbol VDS Parameter drain-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 25 °C Dynamic characteristics QGD gate-drain charge VGS = 4.
5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Min Typ Max Unit - - 30 V [1] - - 100 A - - 97 W -55 - 175 °C - 1.
55 2 mΩ - 7.
5 - nC Nexperia PSMN2R0-30YL N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Table 1.
Quick reference data …continued Symbol Parameter Conditions QG(tot) total gate charge Avalanche ruggedness VGS = 4.
5 V; ID = 10 A; VDS = 12 V; see Figure 14 EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source ID = 100 A; Vsup ≤ 30 V; avalanche energy RGS = 50 Ω; unclamped [1] Continuous current is limited by package.
2.
Pinning information Min Typ Max Unit - 30 - nC - - 151 mJ Table 2.
Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain Simplified outline mb 1234 SOT669 (LFPAK) 3.
Ordering information Graphic symbol D G mbb076 S Table 3.
Ordering information Type number Package Name PSMN2R0-30YL ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)