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PSMN2R0-30YL

NXP Semiconductors
Part Number PSMN2R0-30YL
Manufacturer NXP Semiconductors
Description N-channel FET
Published Aug 7, 2009
Detailed Description www.DataSheet4U.com PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet...
Datasheet PDF File PSMN2R0-30YL PDF File

PSMN2R0-30YL
PSMN2R0-30YL

Overview
www.
DataSheet4U.
com PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev.
01 — 10 September 2008 Preliminary data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
1.
2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.
3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.
4 Quick reference data Table 1.
VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 97 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.
5 V; ID = 10 A; VDS = 12 V; see Figure 14; ...


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